1．3μm直条形吸收区超辐射发光管的复折射率矢量束传播方法模拟  

Simulating for 1. 3urn SLD with Absorbing Straight Waveguide by Complex Refractive Index Vector Beam Propagation Method

作　　者：赵铁民[1] 陈维友[1] 彭宇恒[1] 刘式墉[1] 

机构地区：[1]吉林大学电子工程系

出　　处：《Journal of Semiconductors》1996年第8期578-582,共5页半导体学报（英文版）

摘　　要：束传播方法广泛的应用于无源波导器件的模拟与设计．为了能够模拟有源器件，例如金属包层波导和超辐射发光二极管（ＳＬＤ），我们将复折射率引入其中，器件的增益和吸收通过折射率的虚部来描述．用复折射率的有限差分矢量束传播方法，我们对１．３μｍ直条形吸收区ＳＬＤ进行了模拟与设计，并且给出一种新结构．Abstract A complex refractive index finite difference vector beam propagation method(CRI-FDVBPM)for the simulation of the waveguide devices with loss and gain, such asmetal clad waveguides(MCWG) and superluminescent light emitting diode(SLD)is developed. The gain and loss of the devices are discribed by the image part of complex refractive index. For examples,by using the CRI-FDVBPM,the light propagation characteristicsin SLD is studied.

关 键 词：超辐射 发光二极管 复折射率 矢量束传播 

分 类 号：TN383[电子电信—物理电子学]