生长速率对反应蒸发制备ITO薄膜光电性能的影响  

Preparation and Properties of Indium Tin Oxide Films Deposited by Reactive Evaporation at Different Deposited Rate

作　　者：李林娜[1,2] 孙建[2] 薛俊明[2] 李养贤[1] 赵颖[2] 耿新华[2] 

机构地区：[1]河北工业大学材料科学与工程学院 [2]南开大学光电子薄膜器件与技术研究所,天津市重点实验室,光电信息技术科学教育部重点实验室,天津300071

出　　处：《光电子．激光》2007年第1期24-26,29,共4页Journal of Optoelectronics·Laser

基　　金：国家"973"重点基础研究资助项目(G2000028202;G2000028203);天津市科技发展计划资助项目(06YFG2GX021007;天津市自然科学基金资助项目(043604911)

摘　　要：用电阻加热反应蒸发的方法制备氧化铟锡(ITO)薄膜,测试了膜的电阻率、可见光透过率、载流子浓度和迁移率,讨论生长速率对薄膜光电性能的影响。并在衬底温度为160℃、反应压强为1.4×10-1Pa的条件下,制得可见光范围平均透过率为93%、电阻率为4.7×10-4Ω.cm的ITO透明导电薄膜。Indium-tin oxide（ITO） that has unique characteristics of good conductivity and high light tranmission over the visible spectrum is widely used as the transparent conducting electrode to solar cells and optoelectronic devices. The indium tin oxide（ITO） films have been prepared on glass substrates by reactive evaporation of In-Sn alloy in a system with an oxygen pressure of 1.4× 10^-1 Pa and a substrate temperature of 160 ℃. In this research, the deposition rate is in the range from 0. 1 to 0, 6 A· sec-^1. The electrical resistivity of ITO films is in the range from 4. 7 ×10^-4 to 4. 2 × 10^-3 Ω· cm, The carrier concentration is between 1.3 × 10^20 and 1.91 × 10^21 cm^-3 , and the hall mobility is between 10.7 and 28.9 cm^2 v^-1 s^-1. The influence of deposition rate on structural,optical and electrical properties of the obtained films has been investiga ted.

关 键 词：氧化铟锡(ITO)薄膜 电阻率 载流子浓度 迁移率 透过率 

分 类 号：O484[理学—固体物理]