基于0.6μm CMOS工艺的pH值传感器集成电路设计和研究  

Design and Research of Integrated pH Sensor Using a 0.6μm CMOS Process

作　　者：施朝霞[1] 朱大中[1] 

机构地区：[1]浙江大学信息与电子工程学系

出　　处：《传感技术学报》2006年第6期2501-2504,共4页Chinese Journal of Sensors and Actuators

基　　金：国客自然科学基金会(NSFC)项目资助(60576050)

摘　　要：介绍了一种基于上华0.6μmCMOS工艺实现的pH值传感器集成电路的设计和研究,它采用标准CMOS工艺提供的Si3N4钝化层作为氢离子敏感层,并以多层浮栅结构的ISFET作为传感单元.信号处理电路由基准电流源、恒流恒压控制电路、输出差分电路等组成,使电路输出信号与pH值的变化量呈线性关系.实测结果表明该电路在溶液pH值从1-13范围内输出电压的平均灵敏度为35.8mV/pH,线性度优于5%.该集成电路实现了pH值传感单元与信号处理电路的单片集成.The design and research of an integrated pH sensor using a 0. 6 μm CMOS process offered by Shanghua is introduced. Silicon nitride passivation layer existed in standard CMOS process is used as hydrogenous ions sensitive layer, ISFET with multi-layer floating electrode structure works as the sensing unit. The signal processing circuits include reference current sources, constant current constant voltage control circuits, and output differential circuits. The output of the circuit is proportional with the value of pH. The test result shows this circuit has an average sensitivity of 35.8 mV/pH from pH 1 to pH 13 ,and its linearity is better than 5 %. This integrated circuit realizes monolithic integration of pH sensing unit and signal processing circuits.

关 键 词：PH值传感器 恒流恒压 灵敏度 集成电路 

分 类 号：TN432[电子电信—微电子学与固体电子学]