激光作用生成的网孔硅结构  

Emission model in hole-net structure on silicon crystal by irradiation of laser

作　　者：金峰[1] 王海旭[1] 黄伟其[1] 吴克跃[1] 许丽[1] 刘世荣[2] 秦朝建[2] 

机构地区：[1]贵州大学贵州省光电子技术与应用重点实验室,贵州贵阳550025 [2]中科院地化所,贵州贵阳550003

出　　处：《贵州大学学报（自然科学版）》2007年第2期146-149,174,共5页Journal of Guizhou University:Natural Sciences

基　　金：国家自然科学基金资助项目(10547006)

摘　　要：作者结合量子受限效应,提出纳硅晶与氧化硅界面态发光模型来解释激光作用生成的纳米网孔壁结构的强荧光效应。将功率为50W、波长为1064nm的YAG激光束(束斑直径0.05mm)照射在硅样品表面打出小孔,在孔内的侧壁上,有很特殊的网孔形结构,其中的网孔壁厚为纳米尺度,这里有很强的受激荧光发光效应,发光峰中心约在700nm处。我们将激光与硅样品的作用隔离于无氧化的环境里,分别比较了将硅样品浸入酒精、氢氟酸和水中的激光加工结果,其发光情况证实了该发光模型的真实性。优化激光加工的条件,我们获得了较强发光的样品。Author propose a model to explain the increasing PL emission in a kind of hole-net structure on silicon crystal irradiated with laser of 50W and 1064nm, in which the trap states of the interface between SiO2 and nanocrystal play an important role. The center of the PL spectrum is about 700nm. It is identified through experiments that the oxide on the sample may be the most important fact in the enhancing effect of the PL emission. The optimum conditions in preparing the sample with an enhanced emission can be obtained.

关 键 词：激光辐照 纳米网孔壁 光致荧光增强 氧化硅界面态 

分 类 号：TN249[电子电信—物理电子学]