基于主方程单电子晶体管模拟新方法  

Novel Simulation Method of Single Electron Transistor Based on Master Equation

作　　者：何怡刚[1] 彭浴辉[1] 李必安[1] 李亨[1] 刘慧[1] 方葛丰[1] 

机构地区：[1]湖南大学电气与信息工程学院,长沙410082

出　　处：《固体电子学研究与进展》2007年第1期18-23,共6页Research & Progress of SSE

基　　金：教育部新世纪优秀人才支持计划(NCET-04-0767);高校博士点基金(20060532002);湖南省科技计划项目(03GKY3115;04FJ2003;05GK2005;06JJ2024);国家自然科学基金(50677014)

摘　　要：在对单电子晶体管主方程模型及主方程的解法详细的分析的基础上,把单电子晶体管主方程模型和SP ICE的ABM功能结合,提出了基于主方程的单电子晶体管SP ICE模型。该模型由一个非线性电压控制电流源、非线性电压控制电压源、电容构成。并利用该模型对单电子晶体管V-I特性进行SP ICE模拟,同直接解主方程解法相比,仿真结果表明该模型具有合理的精确度。Basing on the analysis of master equation model of single electron transistors, we combine master equation model of single electron transistors with SPICE＇ ABM function. A SPICE model of single electron transistors based on the master equation is proposed. It consists of a nonlinear voltage-controlled current source, a nonlinear voltage-controlled voltage source, and capacitance. With the model, the V-I characteristics of single electron transistors are simulated with SPICE. The simulation results show that the model is reasonably precise comparing with the traditional methods.

关 键 词：单电子晶体管 主方程模型 SPICE模型 伏安特性 

分 类 号：TN32[电子电信—物理电子学]