菱形NiFe薄膜单元的自发磁化及剩磁状态的研究  

Micromagnetic Investigation on the Spontaneous and Remnant Magnetization State of the Diamond-shaped NiFe Films

作　　者：汤如俊[1] 张万里[1] 张文旭[1] 彭斌[1] 

机构地区：[1]电子科技大学微电子与固体电子学院,成都610054

出　　处：《固体电子学研究与进展》2007年第1期24-27,31,共5页Research & Progress of SSE

基　　金：国家重大基础研究与发展项目(No.51310)

摘　　要：利用微磁学方法系统研究了纳米尺度的NiFe薄膜菱形单元的自发磁化状态及剩磁状态。研究结果表明,在不同的尺寸下,菱形单元将有不同的自发磁化状态及剩磁状态。在单元的长宽尺寸小于某个临界尺寸时,菱形单元结构呈现单畴态。同时还分析了菱形NiFe单元作为磁性随机存储器(MRAM)存储单元时的要求。The spontaneous and remnant magnetization states of the nano-size diamond-shaped NiFe film elements have been investigated by the micromagnetic simulation. The results show that various spontaneous and remnant magnetization states appear under different element dimension. When the length and width of the element are smaller than a critical value, a single domain spontaneous and remnant magnetization state was obtained. The size requirments of the diamond-shaped element as a memory unit in the magnetic random access memory （MRAM） are also analyzed in this paper.

关 键 词：NiFe薄膜 菱形 微磁学模拟 磁性随机存储器 

分 类 号：TP333.8[自动化与计算机技术—计算机系统结构]