CMOS图像传感器时序控制方法研究与实现  

Research & Implementation of Timing Control for CMOS Image Sensor

作　　者：侯舒志[1] 姚素英[1] 周津[1] 刘激扬[1] 徐江涛[1] 胡燕翔[1] 

机构地区：[1]天津大学ASIC设计中心,天津300072

出　　处：《固体电子学研究与进展》2007年第1期119-122,共4页Research & Progress of SSE

基　　金：天津市科技攻关计划项目(No.033183911)

摘　　要：针对CMOS图像传感器滚筒式曝光模式,研究采用多种曝光时间,实现多线段拟合像素输出特性曲线,扩展传感器的动态范围,并改善其平滑性,提高图像清晰度;应用电源保护环、像素二次采样等方法消噪。电路选用charter 0.35μm工艺,经仿真验证满足设计要求。Aiming at the roll exposure for CMOS image sensor, a multi-time exposure mode is proposed to improve dynamic range through fitting the curve of output characteristic and also to optimize image quality by improving the smoothness of curve. Power rings, dual-sampling, etc. are applied for noise elimination. 0.35 μm process is chosen. The layout has passed verification.

关 键 词：滚筒式曝光 动态范围扩展 消噪 

分 类 号：TN402[电子电信—微电子学与固体电子学]