IGCT及其门极驱动电路研究  

Research on IGCT and Gate Drive Circuit

作　　者：张婵[1] 童亦斌[1] 金新民[1] 

机构地区：[1]北京交通大学新能源研究所,北京100044

出　　处：《变流技术与电力牵引》2007年第2期27-29,38,共4页Converter Technology & Electric Traction

摘　　要：IGCT作为一种新型大功率半导体开关器件,吸取了GTO和IGBT的优点,但其驱动则需要借助配套的门极驱动电路板才能实现。介绍了IGCT的基本工作原理,并根据驱动电路的要求分析设计原理,对1100A/4500V逆导IGCT集成门极驱动电路的设计方法进行了具体分析和研究,实验结果验证了设计方法的可行性和正确性。IGCT is a new high power semiconductor, which combines the advantage of IGBT and GTO.However, to realise its drive should the gate take the supporting gate drive circuit the operation principle of IGCT is introduced firstly, and then the design principle in detail. A 1 100 A/4 500 v reverse conducting integrated,gate commutated thyristor gate drive circuit has been designed. The design method has been verified by serial experiments.

关 键 词：IGCT 集成门极驱动电路 硬开通 硬关断 

分 类 号：TN303[电子电信—物理电子学]