用于光电集成的InP基HBT新结构  

A Novel Structure of InP Based HBT for OEIC

作　　者：崔海林[1] 任晓敏[1] 黄辉[1] 李轶群[1] 王文娟[1] 黄永清[1] 

机构地区：[1]北京邮电大学光通讯研究中心,北京100876

出　　处：《光电子．激光》2007年第3期263-266,共4页Journal of Optoelectronics·Laser

基　　金：国家重点基础研究"973"计划资助项目(2003CB314900);高等学校博士学科专项科研基金资助项目(20020013010)

摘　　要：对用于光电集成(OEIC)的InP基异质结双极性晶体管(HBT)进行了分析,提出了一种新的集电区外延结构,该结构是在单HBT(SHBT)的集电区与次集电区间加入特定厚度与掺杂浓度的p-InGaAs层和n-InP层,既适用于集成光探测器,又较好地解决了SHBT反向击穿电压低、传统双HBT(DHBT)电子堆积效应等问题,并具有外延层生长简单、集电区电子漂移速率高等优点。The InP based HBT （heterojunction bipolar transistor used for OEIC （optoelectronic integrated circuits） is analysed,and a novel collector layer structure is proposed, which is achieved by introducing p-InGaAs layer and N-InP layer with specific thickness and doping level between the collector and subcolleetor of SHBT（single heterojunetion bipolar transistor）. This composite collector structure is suitable for integrated pin photodetector and solves the poor breakdown voltage of SHBT and the electron blocking efforts of traditional DHBT（double heterojunetion bipolar transistor）. In addition, the epitaxy layer of this structure is easy to grow and the electron velocity of collector is high.

关 键 词：光电集成(OEIC) 异质结双极性晶体管(HBT) 复合集电区 

分 类 号：TN312[电子电信—物理电子学]