具有非易失存储功能的可逆有机电双稳器件  

A Reversible Organic Electrical Bistable Device for Nonvolatile Memory Applications

作　　者：郭鹏[1] 董元伟[1] 霍钟祺[1] 吕银祥[1] 徐伟[1] 

机构地区：[1]复旦大学材料科学系,上海200433

出　　处：《真空科学与技术学报》2007年第2期89-91,共3页Chinese Journal of Vacuum Science and Technology

基　　金：教育部跨世纪优秀人才培养计划基金;国家自然科学基金(No.60171008);上海市科委纳米专项基金(No.0214nm005No.0452nm087)资助

摘　　要：报道一种能够在室温下具有可逆电双稳特性,并实现非易失信息存储功能的有机薄膜器件。器件为简单的三层结构,Al/HPYM/Ag,HPYM为一种有机分子材料,通过真空热蒸发法制成薄膜作为信息存储介质。该器件可通过正向及反向电压脉冲的激发而实现高阻态(“0”态)、低阻态(“1”态)的转变,相当于信号的写入和擦除。当外电场撤除时,其状态信息可以长时间保持,并且被小电压脉冲读取,两种导电态的阻值比约为105。A reversible organic electrical bistable device for nonvolatile memory applications is reported. The Al/HPYM/Ag device, which was fabricated by vacuum evaporation, has a simple sandwich structure, where the HPYM is a new molecular material. The switching device can be written from a high-resistance state to a low-resistance state by a voltage pulse and then be erased by a reverse voltage.The two states of the device differ in their conductivity by 10^5 times and can be read by a voltage lower than writing and erasing voltage.

关 键 词：有机分子材料 可逆电双稳态 分子基器件 非易失性信息存储 

分 类 号：O626[理学—有机化学] O484.43[理学—化学]