Ag-TCNQ分形生长现象研究  

Fractal Growth of Ag-TCNQ

作　　者：曹冠英[1] 方方[1] 徐华华[2] 孙大林[1] 陈国荣[1] 

机构地区：[1]复旦大学材料科学系 [2]复旦大学化学系,上海200433

出　　处：《真空科学与技术学报》2007年第2期97-100,共4页Chinese Journal of Vacuum Science and Technology

基　　金：国家自然科学基金(No.60471010);上海科学技术基金项目(No.0352nm012)

摘　　要：利用溶液化学反应法,在Ag-TCNQ过饱和度较大的条件下,发现了Ag-TCNQ的分形生长现象。研究表明,Ag膜厚度和与溶液反应的时间对样品的形貌有影响。Ag膜薄生成的样品稀疏,分形维数小;反之样品致密,分形维数大。反应完全时样品最致密,分形维数最大。SEM研究表明,这些分形生长主要是堆垛分形,分支堆积有序,表现出材料良好的自组织性。Fractal growth of Ag-TCNQ was observed by solution reaction when the solution was supersaturated. We found that the thicknesses of Ag films and the reaction time influence significantly on the final morphologies of the as-grown samples. The thinner Ag film is, the sparser .Ag-TCNQ microstmctures are obtained with small fractal dimension. On the contrary, the thicker microstmctures are obtained with large fractal dimension. The SEM results show that these fractals are mainly stacked orderly and show good self-organization.

关 键 词：物理电子学 分形生长 分形维数 Ag—TCNQ 

分 类 号：O48[理学—固体物理]