CoFe/Cu多层膜巨磁阻效应的研究  

Study of Giant Magnetoresistance in CoFe/Cu Multilayer

作　　者：郑金平[1,2] 冯洁[1,2] 

机构地区：[1]上海交通大学微纳科学技术研究院,微米/纳米加工技术国家级重点实验室 [2]薄膜与微细技术教育部重点实验室,上海200030

出　　处：《真空科学与技术学报》2007年第2期123-126,共4页Chinese Journal of Vacuum Science and Technology

摘　　要：采用直流磁控溅射制备了多层膜Ta/缓冲层/[Co95Fe5/Cu]×12/Co95Fe5/Ta。实验发现,多层膜的磁阻性能受到缓冲层材料、各子层厚度以及退火处理的影响。采用优化的多层膜结构:Ni65Fe15Co20缓冲层厚8 nm、CoFe层厚1.55 nm、Cu层厚2.4nm,沉积态薄膜GMR值达到7.6%;而在外加磁场79.6×103A/m下,250℃保温2 h退火处理后,多层膜的GMR值进一步提高到11.9%,磁滞从18.7×102A/m降低到796 A/m。Ta/buffer layer/[Co95Fe5（at%）/Cu] ×12/Co95Fe5/Ta multilayers were deposited by dc magnetron sputtering on Si/SiO2 substrate. The giant magnetoresistance （GMR） of the multilayers are strongly influenced by both the buffer layer material and the thickness of each sublayer of CoFe and Cu;and the GMR is enhanced by annealing in a magnetic field. When the thicknesses of CoFe layer,Cu spacer and Ni65Fe15Co20（ at. % ） buffer layer are 1.55 nm, 2.4 nm and 8 nm, respectively, the GMR of as-deposited multilayers reach to 7.6%, but after annealed at 250 ℃ for 2 hours in a magnetic field of 79.6 × 10^3 A/m,the GMR of the multilayer further increase to 11.9% ,while its hysteresis field reduces from 18.7 × 10^2 A/m to 796 A/m.

关 键 词：多层膜 巨磁阻 缓冲层 退火 

分 类 号：TB79[一般工业技术—真空技术]