微光管大面积GaAs负电子亲合势光电阴极(NEA)光谱特性测试与分析  

Spectral Properties and Negative Electro-affinity of Large-Area GaAs Photocathode in Low-Light-Level Image Intensifier

作　　者：徐江涛[1] 曹桂林[1] 侯志鹏[1] 程跃进[1] 石峰[1] 

机构地区：[1]西安应用光学研究所,西安710100

出　　处：《真空科学与技术学报》2007年第2期138-141,共4页Chinese Journal of Vacuum Science and Technology

摘　　要：结合微光管研制,对大面积GaAs与玻璃粘接制备的透射式光电阴极的光谱特性进行在线测试,并对测试结果进行了分析讨论。依据光谱特性的变化,分析了影响阴极发射性能的根源。当激活工艺稳定状态下,光谱性能差是因GaAs发射层表面氧化,受碳污染及玻璃粘接应力过大等因素造成。通过对发射层表面处理技术研究,确定了阴极制备工艺,制成了管内阴极灵敏度为1400μA/lm的NEA光电阴极和主要性能合格的微光管,使微光管研究有了突破性进展。The influence of the negative electro-aginity（NEA） of the large-area GaAs photocathode on the spectral properties of the low- light-level（LLL） image intensifier was studied. We found that after steady activation, three major factors, including the oxidation and carbon contamination of the GaAs surfaces, and the glue-induced high stress at the interface of glass and GaAs, inversely affect the electron emission. Having solved these problems by optimizing surface modification of GaAs, we succeeded in fabricating the third generation LLL image intensifier with a NEA photocathode sensitivity greater than 1400 μA/lm.

关 键 词：微光管 大面积GaAs 光谱特性 GaAs玻璃粘接 透射式 

分 类 号：TN223[电子电信—物理电子学]