外腔半导体激光器频谱特性研究  

Analysis on The Spectral Properties of External Cavity Semiconductor Lasers

作　　者：惠荣庆[1] 陶尚平[1] 

机构地区：[1]北京邮电学院

出　　处：《电子学报》1989年第3期7-13,共7页Acta Electronica Sinica

摘　　要：本文在外腔半导体激光器的研究中引入了改进的速率方程组,用解析方法导出了稳态振荡条件和谱线宽度表达式,这些表达式适用于具有任意反馈量的外腔半导体激光器。理论分析与实验相符。A set of improved rate equations is introduced to study external-cavity semiconductor lasers, and expressions of steady state oscillation conditions and spectral linewidth are derived analytically, which are suitable for semiconductor lasers with any amount of optical feedback. Theoretical analysis is found to be in agreement with relevant experiment results.

关 键 词：半导体激光器 外腔 频谱特性 

分 类 号：TN248.4[电子电信—物理电子学]