表面光电压法测定半导体光跃迁类型和带隙参数  

Determination for Energy Gap Parameters of Semiconductors and Optical Transition Types by the Surface Photovoltage Method

作　　者：沈(岂页)华 

机构地区：[1]厦门大学

出　　处：《电子学报》1989年第3期1-7,共7页Acta Electronica Sinica

基　　金：国家自然科学基金

摘　　要：本文用表面光电压法测定了半导体材料的光跃迁类型和带隙参数,推导了有关的计算公式,测定了Ge、Si、GaAs、InP、GaP、AlGaAs,GaAsP等材料的禁带宽度和其他能隙等参数,计算结果与其他方法的测量结果基本一致。The energy gap parameters of semiconductors and the optical transition types are determined by the surface photovoltage method. The calculating expressions are derived. The forbidden band width and energy gaps are measured for Ge, Si GaAs, InP, GaP, AlGaAs and GaAsP, etc. The calculated results basically agree with experimental values measured by other methods.

关 键 词：半导体材料 参数 测定 光电压法 

分 类 号：TN304.07[电子电信—物理电子学]