Ⅲ-V族窄带隙掺Mn稀磁性半导体材料研究进展  

Research Progress in Ⅲ-Ⅴ Group Narrow Band Gap Mn-doped Diluted Magnetic Semiconductor Materials

作　　者：任平[1] 张俊喜[1] 徐群杰[1] 

机构地区：[1]上海电力学院能源与环境工程学院,上海200090

出　　处：《上海电力学院学报》2007年第1期53-56,共4页Journal of Shanghai University of Electric Power

基　　金：上海市重点学科建设项目(P1304);上海市电力学院青年基金(K-2004-34)

摘　　要：综述了目前国内外以As-基与Sb-基为基础的Ⅲ-V族窄带隙掺Mn稀磁性半导体材料的研究现状,系统地介绍了其生长方法与物理特性的研究进展,并指出其发展趋势与应用前景.The recent research progress of the As-based and Sb-based Ⅲ-V group narrow band gap Mn-doped diluted magnetic semiconductor materials is reviewed. The growth techniques and physical properties of the materials are systematically introduced, and their development trend and apphcation foreground are also introduced.

关 键 词：稀磁性半导体材料 InMnAs InMnSb 

分 类 号：TN304.7[电子电信—物理电子学]