CsF/Al阴极对提高芴基饱和红光器件性能的研究  

Performance improvement of polymer light-emitting diodes based on fluorene copolymer with cesium fluoride/aluminum cathode

作　　者：田仁玉[1] 阳仁强[2] 彭俊彪[2] 曹镛[2] 

机构地区：[1]华南理工大学物理科学与技术学院,广州510640 [2]华南理工大学高分子光电材料与器件研究所,广州510640

出　　处：《物理学报》2007年第4期2409-2414,共6页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:50573024);教育部科学技术研究重点项目(批准号:104208);国家重点基础研究发展规划(批准号:2002CB61340205)资助的课题~~

摘　　要：从聚合物/电极界面修饰的角度对基于饱和红光聚合物PFO-SeBT(9,9-二辛基芴与4,7-二硒吩-2,1,3-苯并噻二唑的无规共聚物)的发光二极管的性能进行了改进,通过采用CsF/Al阴极并优化CsF的厚度以及在PFO-SeBT1/阳极界面插入聚乙烯基咔唑(PVK)层,使器件的最大电致发光外量子效率达到1.79%,比采用低功函数的金属Ba/Al阴极器件的效率提高了两倍多.器件的性能得以改善的原因是CsF/Al阴极能有效提高电子注入能力以及PVK层对电子的阻挡作用.Polymer light-emitting diodes with saturated red emission were fabricated using the copolymer, poly [2,7-（9,9-dioctyl） fluorene-co-5, 5＇-（ 4, 7-diselenophenyl ）-2, 2＇-yl-2, 1, 3-benzothiadiazole ] （ PFO-SeBT）. Special attention was paid to polymer/electrode interface modification. The highest electroluminescence external quantum efficiency of 1.79 %, which was more than twice that of devices with low work function metal cathode Ba/A1, was achieved by incorporation of CsF/A1 cathode with carefully optimized thickness of CsF, and insertion of PVK layer in the PFO-SeBTl/anode interface. Efficient improvement of electron injection of CsF/A1 cathode and blocking effect of PVK to electrons were proposed to be responsible for the improved performances of the device.

关 键 词：聚合物发光二极管 聚合物/电极界面 CsF/Al阴极 电子注入 

分 类 号：O462[理学—电子物理学]