(SiC)_P表面低成本化学改性的研究  

Study on Low Cost Chemistry Modification on(SiC)_P

作　　者：宿辉[1] 王桂芳 栾风虎 胡胜鹏[1] 

机构地区：[1]黑龙江工程学院材料与化学工程系,黑龙江哈尔滨150050 [2]哈尔滨工程大学材料科学与工程系,黑龙江哈尔滨150001

出　　处：《表面技术》2007年第2期21-23,共3页Surface Technology

基　　金：黑龙江省科技攻关项目(GC06A208);学院优秀青年基金(Q06002);黑龙江省自然科学基金(E2004-20)

摘　　要：为解决裸(SiC)P在应用中存在的不足,提出(SiC)P表面低成本化学改性的思路。采用简单的化学镀技术,改进氧化、亲水、敏化和活化的前处理工艺,对(SiC)P进行表面化学改性。确定了最佳的试验工艺,获得了镀层连续、无光滑(SiC)P裸露的较高质量的碳化硅复合粉体[简写为(Ni/SiC)P],通过SEM、EDS、XRD、TEM等测试,结果表明:改性后的(Ni/SiC)P较改性前的(SiC)P导电性有所提高,形貌、组成发生改变。同时分析了热处理对(Ni/SiC)P的影响,结果表明:随着温度的升高,(Ni/SiC)P表面改性层中的镍由非晶态转化为晶态。For solving shortage of naked （SiC）p in the application, the surface low cost chemistry modification on （SiC）p was expound. The simple electroless plating improved the pre-treatments technology including oxidation, geting close to water, sensitization and activation process. The continual, non-lubricous and high quality decoration of （ SiC ） p （ abbreviate as （Ni/SiC） p ） was obtained. Experiment results of SEM, EDS, XRD and TEM indicate that the electric functions of （Ni/SiC）p is much higher than those of unembellished （SiC）p, and morphology and structure of （Ni/SiC） p are changed. The effect of heat treatment on （ Ni/SiC ） p was also analyzed. The result expresses that along with the temperature, the non-crystalline state nickel in surface modified layer on （Ni/SiC）p becomes crystalline state nickel along with the going up of temperature.

关 键 词：(SiC)P 碳化硅复合粉体 表面改性 化学镀 热处理 

分 类 号：TQ153.3[化学工程—电化学工业]