检索规则说明:AND代表“并且”;OR代表“或者”;NOT代表“不包含”;(注意必须大写,运算符两边需空一格)
检 索 范 例 :范例一: (K=图书馆学 OR K=情报学) AND A=范并思 范例二:J=计算机应用与软件 AND (U=C++ OR U=Basic) NOT M=Visual
作 者:高兴国[1] 李健[1] 脱英英[1] 冷建材[1]
机构地区:[1]山东轻工业学院数理学院,山东济南250353
出 处:《山东轻工业学院学报(自然科学版)》2007年第1期90-93,共4页Journal of Shandong Polytechnic University
摘 要:绝缘体上硅锗是近年来受到人们广泛关注和研究的新型微电子材料,它以其独特的全介质隔离结构,可为研发新型的超高速、低功耗、抗辐射、高集成度硅基器件和芯片提供一种新的解决方案,有希望成为突破体硅器件的物理极限、在深亚微米超大规模集成电路芯片主流技术中获得广泛地应用。介绍了我们制备绝缘体上硅锗薄膜的方法和结果。In recent years, SiGe thin films on insulator as a new kind of microelectronic materials has attracted widely attention and become the focus of research activities but it is too costly to carry on large-scale production. In this article molecular beam epitaxy method is investigated to fabricate SiGe thin films for the objective of reducing cost. As a result SiGe thin films have a good crystalline with the Ge fraction varying between 0.3 and 0.6. In conclusion, high quality SiGe thin films was prepared with simpler process and lower cost by using molecular beam epitaxy method, which is advantageous to carrying out large-scale production.
分 类 号:TN405.984[电子电信—微电子学与固体电子学] TN304.12
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在载入数据...
正在链接到云南高校图书馆文献保障联盟下载...
云南高校图书馆联盟文献共享服务平台 版权所有©
您的IP:216.73.216.30