VO_x薄膜的sol-gel法制备  

Fabrication of VO_x thin films by sol-gel processing

作　　者：曾亦可[1] 吴帮军[1] 姜胜林[1] 邓传益[1] 

机构地区：[1]华中科技大学电子科学与技术系,湖北武汉430074

出　　处：《电子元件与材料》2007年第4期22-24,共3页Electronic Components And Materials

基　　金：国家"973"计划资助项目(2004CB619300);新世纪优秀人才支持计划资助项目(NCET-04-0703);湖北省科技攻关计划资助项目(2005AA101C04)

摘　　要：通过对工艺条件的研究,解决了钒有机溶胶与基片的亲水性问题,提出了成膜牢固的亲水处理方法,制备出了无裂纹、致密性好的VOx薄膜。测量结果表明,520℃热处理条件下的VOx薄膜样品的平均电阻温度系数达到了3.95%K–1。而470℃热处理下的VOx薄膜样品,其升降温阻温特性一致性很好,可用作高灵敏度红外探测器敏感元材料。The hydrophilic problem was resolved between VOx organic sol and SiO2/Si substrate slice, a method of forming close film was brought forward. And some crack-free and compact VOx samples were prepared. The results show the average aR is 3.95 % K^-1 for VOx thin film samples annealed at 520℃. The VOx film samples annealed at 470℃ demonstrate similar In R-t characteristics under heating-up and cooling period, and are suitable for sensitive element of high performance infrared detectors,

关 键 词：电子技术 VOX SOL-GEL 薄膜 R-T特性 

分 类 号：TN304.05[电子电信—物理电子学]