掺氟二氧化锡纳米粉的制备及电性能研究  

Research on preparation and electric properties of F-doped tin oxide nanopowder

作　　者：何云[1] 白凡飞[1] 贺平[1] 贾志杰[1] 谭铭[1] 

机构地区：[1]华中师范大学物理学院纳米科技中心,湖北武汉430079

出　　处：《电子元件与材料》2007年第4期34-36,共3页Electronic Components And Materials

基　　金：湖北省纳米专项基金资助项目(20041003068-09)

摘　　要：以SnCl2·2H2O、HF为原料,采用共沉淀法合成了掺氟二氧化锡FTO(SnO2∶F)纳米粉。在氧化的过程中进行掺杂,使F原子更容易取代O原子,在400℃低温下蒸发得到了低电阻率的FTO纳米粉。应用SEM、XRD、EDS和压片测电阻等方法,对所获粉体进行了表征。结果表明,F的掺杂明显降低了SnO2的电阻率。当r(Sn∶F)为10∶3时,FTO纳米粉的电阻率最低,为57.2Ω/cm。Using SnC12 · 2H2O and HF as raw materials, the F-doped SnO2 （FTO） nanopowder was synthesized by co-precipitation method, F atoms were doped during the oxidizing process, in order to F atom replace O atom easily. FTO nanopowder could be produced at 400℃, and it was characterized by XRD, SEM, EDS, and pressing flake test resistance method, As indicate by the results, the doped F can be decreased the resistivity of SnO2 powder remarkably. When r（Sn：F） = 10：3, FTO nanopowder has the lowest resistivity （57.2Ω/cm）,

关 键 词：半导体技术 掺氟二氧化锡 纳米粉 低电阻率 共沉淀法 

分 类 号：TB43[一般工业技术]