TiO_2压敏陶瓷的显微分析和电学性能  

Microscopic analysis and electrical properties of TiO_2 varistor ceramics

作　　者：严继康[1] 甘国友[1] 陈海芳[1] 张小文[2] 孙加林 

机构地区：[1]昆明理工大学材料与冶金工程学院,云南昆明650093 [2]昆明物理研究所,云南昆明650223 [3]云南省科学技术协会,云南昆明650021

出　　处：《电子元件与材料》2007年第4期53-55,58,共4页Electronic Components And Materials

基　　金：云南省科技攻关资助项目(2002GG09)

摘　　要：研究了烧结温度对TiO2压敏陶瓷的显微结构、显微成分、势垒结构和电学性能的影响。采用SEM和EDS测试其显微结构和晶粒的化学组成。根据热电子发射理论和电学性能计算了势垒结构。在1350℃烧结的TiO2压敏陶瓷具有均匀而致密的显微结构,其晶粒大小为15μm左右,施主掺杂Nb5+在TiO2晶粒中的固溶度为1.49%;势垒高度?B为0.28eV,势垒宽度xD为48nm;压敏电压V1mA为5.25V/mm,非线性系数α为4.2,εr为1.1×104。The effects of sintering temperature on microstructure, micro-composition, barrier structure and electrical properties of TiO2 varistor ceramics were investigated, Microstructures and grain＇s chemistry compositions of samples were tested by SEM and EDS methods. Based on the thermoelectronic emission theory, barrier structure of samples was calculated by analyzing electrical properties of samples. The sample sintered at 1 350℃ exhibits a compact and homogeneous microstructure. The grains size of the TiO2 sample is about 15μm, solid solubility of donor doping Nb^5＋ solute in TiO2 grains of 1.49 %, φB of 0,28 eV, xD of 48 nm, VlmA of 5,25 V/mm, αof 4.2 and εr of 1.1×10^4.

关 键 词：电子技术 TIO2压敏陶瓷 烧结温度 显微结构 势垒结构 电学性能 

分 类 号：TN379[电子电信—物理电子学]