缓冲气体对激光烧蚀制备掺Er纳米Si晶薄膜结构特性的影响  

Influence of the Ambient Gas on the Microstructural Properties of Er-doped Nanocrystalline Si Films Fabricated by Pulsed Laser Ablation

作　　者：周阳[1] 刘云山[1] 褚立志[1] 段平光[1] 邓泽超[1] 庞学霞[1] 王英龙[1] 

机构地区：[1]河北大学物理科学与技术学院,河北保定071002

出　　处：《河北大学学报（自然科学版）》2007年第2期139-142,共4页Journal of Hebei University(Natural Science Edition)

基　　金：河北省自然科学基金资助项目(503125E2005000129);河北大学自然科学基金资助项目(2005Q08)

摘　　要：采用XeCl脉冲准分子激光器,保持激光脉冲比为1∶3,分时烧蚀Er靶和高阻抗单晶Si靶,在10 Pa的Ne气环境下沉积了掺Er非晶Si薄膜.在氮气保护下,分别在1 000℃,1 050℃和1 100℃温度下进行30 min热退火处理.对所得样品的Raman谱测量证实,随着退火温度的升高,薄膜的晶化程度提高;利用扫描电子显微镜观测了所制备的掺Er纳米Si晶薄膜的表面形貌,并与相同实验参数、真空环境下烧蚀并经热退火的结果进行了比较.结果表明,Ne气的引入,使形成轮廓明显的掺Er纳米Si晶粒的退火温度降低,有利于尺寸均匀的晶粒的形成.Ablating alternately Er and Si targets with the pulse-number-ratio of 1：3 by a XeCl excimer laser, Er-doped amorphous Si films were prepared in Ne gas of 10 Pa or vacuum. The as-formed films, being annealed for 30 minutes at constant temperature of 1 000℃, 1 050 ℃ or 1 100℃ in N2 gas, were converted into Erdoped nanocrystalline Si films, which were confirmed by the position of Raman spectra peak. Scanning electron microscopy images show that Ne gas, compared to vacuum, induces more uniform-sized Er-doped nanocrystalline Si nanoparticles and lower crystallizing temperature.

关 键 词：掺Er纳米Si晶粒 脉冲激光烧蚀 RAMAN谱 表面形貌 

分 类 号：O432.1[机械工程—光学工程] O532.26[理学—光学]