Ⅰ-型硅基笼合物Ba_8Ga_(16)ZnxSi_(30-x)的合成及电传输特性  

Synthesis and Electrical Transmission Characteristics of Type-Ⅰ Ba_8Ga_(16)ZnxSi_(30-x)Clathrates

作　　者：邓书康[1] 唐新峰[1] 熊聪[1] 张清杰[1] 

机构地区：[1]武汉理工大学材料复合新技术国家重点实验室,武汉430070

出　　处：《Journal of Semiconductors》2007年第4期553-557,共5页半导体学报（英文版）

基　　金：国家自然科学基金重大国际合作基金(批准号:50310353);高等学校科技创新工程重大项目培育资金(批准号:705035)资助项目~~

摘　　要：用固相反应法结合熔融法合成Zn掺杂单相n型Ba8Ga16ZnxSi30-x化合物,探索Zn在Si位的取代对其结构及电传输特性的影响规律.研究结果表明:x=1时化合物的平均键角畸变Δθ最大为4.4°;当取代分数x=0,2,4时,对应样品的电导率明显高于x=1,3时对应样品的电导率,在室温附近,Ba8Ga16Zn2Si28化合物表现出较高的电导率,约为3.0×105S/m,当x=1时,对应化合物的电导率在测试温度范围内最低;当取代分数x=0,2,4时对应样品的Seebeck系数明显高于x=1,3时对应样品的Seebeck系数,且随着填充分数的增加,Seebeck系数分别逐渐降低;Ba8Ga16Zn2Si28化合物在测试温度范围内表现出较好的电性能,在1000K处具有最大的功率因子1.03×10-3W/(m.K2).Si-clathrate compounds, n-type Ba8 Ga16 Znx Si30- x （ x = 0,1,2,3,4）, are synthesized by using the solid-state reaction method and the melting method. The effects of the replacement of Si with Zn on the structure and the electrical transmission characteristics are investigated for n-type Ba8Ga16ZnxSi30-x. The results indicate that the sample with the value of x = 1 has the maximal bond angle distortion △θ,△θ = 4. 4°. The electrical conductivity of samples with x = 0,2,4 is higher than that of samples with x = 1,3. Among the samples, the electrical conductivity of Ba8 Ga16 Zn1 Si29 is the lowest. The samples with x = 0, 2,4 exhibit a higher Seebeck coefficient than that of samples with x=1,3, and the value of the Seebeck coefficient decreases with the increase of the Zn composition. The power factor of Ba8Ga16Zn2Si28 compound is as large as 1.03 × 10^-3 W/ （m · K^2） at 1000K.

关 键 词：Ⅰ-型笼合物 SEEBECK系数 电导率 

分 类 号：TN304.9[电子电信—物理电子学]