原子发射光谱双谱线法测量半导体桥(SCB)等离子体温度(英文)  

Measurement of the Semiconductor Bridge(SCB) Plasma Temperature by the Double Line of Atomic Emission Spectroscopy

作　　者：冯红艳[1] 李艳[1] 张琳[1] 吴蓉[1] 王俊德[1] 朱顺官[1] 

机构地区：[1]南京理工大学化工学院,江苏南京210094

出　　处：《含能材料》2007年第2期134-136,147,共4页Chinese Journal of Energetic Materials

基　　金：National Natural Science Foundation(20175008);Young Scholar Foundation of Nanjing University of Science and Technology(Njust200303)

摘　　要：在原子发射光谱双谱线法的基础上，设计了含有两个干涉滤光片和光电倍增管双谱线测温系统。仪器的最高的时间分辨率为0．1μs。讨论了不同能量输入条件下SCB等离子体的温度和等离子体的存在时间。实验结果表明在电压24～32V，电容68μF不变的情况下，等离子体的温度从2710K升高到3880K，等离子体存在时间从170．7μs上升到283．4μs。A system consisting of two interference filters of different wavelength and two photo-multiplier detectors was used to measure the time evolution of the SCB plasma temperature based on the double line of atomic emission spectroscopy. The highest temporal zesolution of the apparatus was 0.1 μs. The results show that when the voltage is 24 - 32 V and all capacitances are 68 μF, the highest temperature and duration of the SCB plasma increases from 2710 K to 3880 K and from 170.7 μs to 283.4 μs, respectively.

关 键 词：应用化学 SCB等离子体 原子发射光谱法 温度测定 

分 类 号：TN307[电子电信—物理电子学]