Bi_(1.5-x)M_xZnNb_(1.5)O_7(M=La,Dy)陶瓷介电性能的研究  

Dielectric Properties of Bi_(1.5-x)M_xZnNb_(1.5)O_7(M=La,Dy) Ceramics

作　　者：刘璞凌[1] 丁士华[1] 杨同青[1] 沈波[1] 姚熹[1] 

机构地区：[1]同济大学功能材料研究所,上海200092

出　　处：《压电与声光》2007年第2期201-203,共3页Piezoelectrics & Acoustooptics

基　　金：国家"九七三"计划基金资助项目(2002CB613302);上海市重点建设学科基金资助项目

摘　　要：研究了La3+、Dy3+A位替代对BZN基陶瓷材料的介电性能的影响。结果表明,在掺杂量小于0.15(摩尔分数)的范围内,所研究样品的相结构均为立方焦绿石相。掺La的BZN陶瓷样品晶粒较大,随着掺杂量由0.1增加到0.15,样品的密度和介电常数减小,1 MHz下的介电弛豫峰-峰值温度由-95℃向低温方向移动到-99℃。掺Dy的BZN陶瓷样品晶粒较小,随着掺杂量由0.1增到0.15,样品的密度和介电常数增大,1 MHz下的介电弛豫峰-峰值温度由-96℃向高温方向移动到-89℃。The structure and dielectric properties of Bi（1.5-x） Mx ZnNb1.5O7 （M： La, Dy） ceramics were investigated. The structure of all samples exhibited a single cubic pyrochlore phase when x≤0. 15. The grain size of Dydoped BZN ceramics was smaller than that of La-doped BZN ceramics. The bulk density and dielectric constant increased with the increasing of Dy^3＋ substitution and decreased with the increasing of La^2＋ substitution. When the substitution content increased from 0.1 to 0. 15, the change of peak temperature of dielectric relaxation was opposite to La-doped and Dy-doped ceramics. For La-doped BZN ceramics, the peak temperature moved from -95-99 ℃ at 1 MHz. For Dy-doped BZN ceramics, the peak temperature moved from -96-89 ℃ at 1 MHz.

关 键 词：BZN 立方焦绿石 替代 介电性能 

分 类 号：TM28[一般工业技术—材料科学与工程]