工业铜单晶线材浸蚀蚀坑的研究  

Study on the Etch Pits of Copper Single Crystal Wires

作　　者：严文[1] 王雪艳[1] 陈建[1] 李巍[1] 范新会[1] 

机构地区：[1]西安工业大学材料与化工学院,西安710032

出　　处：《西安工业大学学报》2007年第1期46-51,共6页Journal of Xi’an Technological University

基　　金：国家自然科学基金(50471098);陕西省自然科学基金(2003E101)

摘　　要：对工业铜单晶线材用不同浸蚀剂,浸蚀时间,材料晶体取向等方面进行了浸蚀试验.结果表明,在氯化铁盐酸溶液中仅当配比为20 g(FeCl3)∶5 ml(HCl)∶100 ml(H2O)时会有蚀坑产生;蚀坑密度(EPD)随试样浸蚀时间和试样的变形量的增加而增大,当达到一定程度时会趋于饱和;铜单晶线材中(111)面EDP值高于(100)面;经过扫描电镜观察,判定该蚀坑为位错蚀坑.铜单晶线材中位错蚀坑密度与材料浸蚀时间,变形量以及晶体学取向有关.The etch pits of copper single crystal wires have been systematically studied. The experimentations were carried out from different corrosive, corroded time and crystal orientation of material. The result shows that the etch pits are formed when the mixture ratio of iron chloride and muriatic acid solution is 20 g FeCl3： 5 ml HCl：100 ml H2O. EPD increases with increasing the corroded time and deformative extent. However, EPD tends to be saturation when the corroded time and deformative extent reaches a value. EPD on （111） plane is higher than （100） plane in the copper single crystal wires. The shape of etch pits on the face of crystal has been observed by SEM, and confirmed to be dislocation etch pits. The dislocation etch pits density （EPD） of copper single wires is related with corroded time,deformative extent and crystal orientation of material.

关 键 词：铜单晶 位错蚀坑 晶体取向 塑性变形 

分 类 号：TG172[金属学及工艺—金属表面处理]