Fabrication and property of high-performance Ag-Pb-Sb-Te system semiconducting thermoelectric materials  

作　　者：ZHOU Min LI JingFengt WANG Heng 

机构地区：[1]State Key Laboratory of New Ceramics and Fine Processing, Department of Materials Science and Engineering, Tsinghua University, Beijing 100084, China

出　　处：《Chinese Science Bulletin》2007年第7期990-996,共7页

基　　金：Supported by the National Natural Science Foundation of China (Grant Nos. 50325207, 50310353, 50621201);the National Basic Research Program of China (Grant Nos. 2007CB607504, 2007CB 607505)

摘　　要：High performance Ag-Pb-Sb-Te system thermoelectric bulk materials were fabricated by a combination of mechanical alloying (MA) and spark plasma sintering (SPS). Phase composition and microstructure of the resultant materials were investigated by X-ray diffraction (XRD) and scanning electron micros-copy (SEM) analysis. A special emphasis was paid to the effects of chemical composition, especially the Pb content on the thermoelectric properties of the Ag0.8Pb18+xSbTe20 samples, including electrical resistivity, Seebeck coefficient, power factor, thermal conductivity and dimensionless figure of merit. The present study reveals that the optimal composition of Ag0.8Pb18+xSbTe20 samples is Ag0.8Pb22.5SbTe20 and the maximum figure of merit (ZT) is 1.2 at 673 K.High performance Ag-Pb-Sb-Te system thermoelectric bulk materials were fabricated by a combination of mechanical alloying （MA） and spark plasma sintering （SPS）. Phase composition and microstructure of the resultant materials were investigated by X-ray diffraction （XRD） and scanning electron microscopy （SEM） analysis. A special emphasis was paid to the effects of chemical composition, especially the Pb content on the thermoelectric properties of the Ag0.8Pb18＋xSbTe20 samples, including electrical resistivity, Seebeck coefficient, power factor, thermal conductivity and dimensionless figure of merit. The present study reveals that the optimal composition of Ag0.8Pb18＋xSbTe20 samples is Ag0.8Pb18＋xSbTe20 and the maximum figure of merit （ZT） is 1.2 at 673 K.

关 键 词：半导体热电材料 Ag-Pb-Sb-Te系统 制备 性能 

分 类 号：TN37[电子电信—物理电子学]