800nm Lightsheer半导体激光脱毛临床疗效及组织病理变化  

Hair removal with 800 nanometer diode laser： a clinical and histological study

作　　者：刘玲[1] 王红兵[1] 王红云[1] 何黎[1] 

机构地区：[1]昆明医学院第一附属医院皮肤性病科,昆明650032

出　　处：《中华医学美学美容杂志》2007年第2期90-93,共4页Chinese Journal of Medical Aesthetics and Cosmetology

摘　　要：目的通过观察中国人脱毛的临床疗效及治疗前后的组织病理改变，探讨Lightsheer半导体激光脱毛的机制，探索出中国人的最佳治疗参数。方法应用Lightsheer半导体激光仪（波长800nm，脉宽100ms，光斑面积为9mm×9mm）对80例脱毛者进行脱毛治疗，能量密度20～40J／cm^2，2次治疗间隔为1个月。应用毛发平均直径及毛发平均密度定量观察临床疗效，光镜及电镜下观察脱毛前后毛发、毛囊及其他皮肤结构的组织病理改变。结果80例经过3次脱毛治疗后，治疗区域毛发数量显著减少，剩余少许新生毛发直径变细。光镜下见毛囊有损伤，电镜下见整个毛囊壁均有不同程度损伤，内外毛根鞘细胞，特别是毛球部的毛母质细胞胞质内发生空泡样改变，内质网明显扩张，线粒体肿胀，细胞内含有的黑素小体崩解等改变。结论Lightsheer半导体激光采用适当能量密度进行脱毛治疗，能有效而安全地脱去毛发。Objective To investigate the effect and the pathogenesis of 800 nanometer Lightsheer diode laser on hair removal by observing clinical effect and histological change before and after treatment, and to look for the best references of treatment. Method Eighty cases were treated with Lightsheer diode laser （wavelength 800 nm, pulse duration lOOms, spot size 9 mm × 9 mm）. All of cases were treated three times, fluencies 20-40 J/cm. The treatment interval was 1 month. The effect of hair removal was evaluated by average diameter and average number of the hair. Histological changes were observed under the light microscope and electron microscope before and after treatment. Results After three times irradiation with Lightsheer diode laser, hair numbers were successively reduced, left hair were slender. Light microscopy revealed that the hair follicles were damaged; Electron microscopy revealed that whole of the hair follicles were damaged in some degree, especially matrix cells in bulbs of hair. There were swollen cells in outer root sheath and inner root sheath, and endoplasmic reticulum were expanded obviously, and mitochondria were edema, and melanosomes were broken into smaller fragments. Conclusions Using a proper fluencies, hair removal with Lightsheer diode laser is safe and effective.

关 键 词：毛囊 脱毛 半导体激光 组织病理 

分 类 号：R758[医药卫生—皮肤病学与性病学]