铈掺杂多孔硅的形貌和光致发光研究  

Study on the morphology and photoluminescence of porous silicon doped with cerium

作　　者：张汉谋[1] 马书懿[1] 张国恒[1] 

机构地区：[1]西北师范大学物理与电子工程学院,甘肃兰州730070

出　　处：《功能材料》2007年第4期596-598,共3页Journal of Functional Materials

基　　金：国家自然科学基金(60276015);教育部科学技术研究资助项目(204139);甘肃省教育厅科研资助项目(0501-04);甘肃省高分子材料重点实验室开放基金(KF-05-03)

摘　　要：采用电化学方法在多孔硅中掺杂了稀土铈(Ce)元素。利用原子力显微镜表征了多孔硅和Ce掺杂多孔硅的表面形貌,采用荧光分光计对样品的光致发光(PL)特性进行了研究。多孔硅样品在480nm波长激发下PL谱上观察到两个发光峰,分别位于572和650nm;通过光致发光激发谱测量,得到位于572、650nm的发光峰对应的最佳激发波长分剐为380和477nm。Ce掺杂多孔硅样品在480nm波长激发下, PL谱上只显示出多孔硅原有的发光增强;而在380nm波长激发下的PL谱上不仅显示多孔硅原有的发光增强,而且还出现了新的发光峰位于517nm。认为这分别是Ce^(3+)与nc-Si发生了能量传递和Ce掺杂引入了新的发光中心所造成的。The rare earth element cerium （Ce） was doped in porous silicon with electrochemical method. The surface morphology of the samples was characterized by atomic force microscope. The photoluminescence （PL） properties of the samples were studied with fluorescence spectrophotometer. The PL spectrum of porous silicon shows two emission peaks located at 650 and 572nm under excitation of 480nm. From the measurement of photoluminescence excitation （PLE） spectra ,the excitation bands peaked at 380 and 477nm were obtained for the monitored wavelengths are 572 and 650nm respectively. The intensity of emission peaks of porous silicon strengthened in the PL spectrum of porous silicon doped with Ce sample under excitation of 480 and 380nm. A new emission peak located at 517nm was also found in that under excitation of 380nm. We attribute these to the energy transfer between Ce^3＋ ions and no-Silicon and a new luminescence center induced by cerium.

关 键 词：稀土 电化学掺杂 光致发光 

分 类 号：O649.4[理学—物理化学] O484.4[理学—化学]