CuS纳米线阵列的制备  

Preparation of CuS nanowires array

作　　者：任贤明[1] 江奇[1] 杨高强[1] 柯川[1] 易锦[1] 赵勇[1] 

机构地区：[1]西南交通大学材料科学与工程学院超导研究开发中心材料先进技术教育部重点实验室,四川成都610031

出　　处：《功能材料》2007年第4期652-654,共3页Journal of Functional Materials

基　　金：国家自然科学基金(50372052);四川省科技攻关计划资助项目(2006Z02-006-1;05GG-008-003)

摘　　要：将多孔阳极氧化铝模板(AAO)的电化学沉积技术与真空硫化技术相结合,在制备Cu纳米线的基础之上,制备得到了CuS纳米线阵列。采用扫描电子显微镜电镜和X射线衍射仪对二次氧化的AAO模板和所得Cu与CuS纳米线的形貌和结构进行了表征,结果表明所得CuS纳米线不仅具有良好的有序阵列,而且具有多晶结构。在硫化过程中,随着硫化温度的升高,CuS结晶程度增大,在500～550℃时,达到最大的结晶程度。Cu nanowires array was first prepared by the method of anodic alumina template （AAO） electrochemical deposition. And then, the Cu nanowires array reacted with sulfur in a vacuum condition at high temperature. At last, the CuS nanowires array was obtained. The morphology and the structure of two-step AAO template and nanowires were studied by scanning electron microscope （SEM） and X-ray diffraction （XRD）. The resuits showed that the CuS nanowires arrays had not only good array but also well poly-crystal structure. During the process of Cu nanowires array sulfuration, the CuS nanowires array crystal progress increased with the increase of sulfuration temperature. When the sulfuration temperature increased up to 500 to 550℃, the CuS nanowires array had its maximum crystal progress.

关 键 词：多孔氧化铝模板 CuS纳米线阵列 硫化 

分 类 号：O646.51[理学—物理化学] TB383[理学—化学]