基于体驱动技术的低压CMOS带隙基准电路设计  

Design of a low-voltage CMOS bandgap reference circuit based on the body-driven technique

作　　者：王炜[1] 王晓娟[1] 刘涛[1] 

机构地区：[1]合肥工业大学电气与自动化工程学院,安徽合肥230009

出　　处：《合肥工业大学学报（自然科学版）》2007年第4期416-419,共4页Journal of Hefei University of Technology：Natural Science

基　　金：国家自然科学基金资助项目(60373076);国家自然科学基金资助项目(60576034)

摘　　要：为满足低电源电压设备对精密电压基准的需求,文章设计了一款低压CMOS带隙基准电路。该电路的放大器使用体驱动技术,提高了输入电压共模范围;基准电路采用电阻分压结构,通过调节电阻之间的比值获得所需要的基准电压;并采用TSMC 0.35μm CMOS工艺模型对电路进行了仿真,电源电压工作在1 V,输出电压在550 mV左右,在-40-120℃范围内温度漂移大约为19×10-6℃。To meet the demand of the low voltage equipment, a low-voltage CMOS bandgap circuit is designed. The body-driven technique of the amplifier is adopted, thus enlarging the region of commonmode input voltage. The circuit adopts the resistive subdivision so as to adjust the ratio of the resistors for getting the reference voltage. This design was simulated by the TSMC 0. 35μm CMOS tech- nology. The operating voltage of the circuit is 1 V, and it prov/des 550 mV output reference voltage. The temperature coefficient is 19×10^-6/℃ within the temperature range from -40 ℃ to 120 ℃.

关 键 词：带隙基准 体驱动技术 电阻分压 

分 类 号：TN47[电子电信—微电子学与固体电子学]