MoSi_2发热元件冷热端扩散接合工艺的研究  

Diffusion bonding technology of MoSi_2 heating element

作　　者：郜剑英[1] 江莞[1] 

机构地区：[1]中国科学院上海硅酸盐研究所高性能陶瓷和超微结构国家重点实验室,上海200050

出　　处：《材料科学与工艺》2007年第1期6-10,共5页Materials Science and Technology

基　　金：国家杰出青年基金资助项目(50625414);国家自然科学基金资助项目(50372078)

摘　　要：为了研究扩散接合工艺参数对二硅化钼发热元件冷热端的接合强度的影响,对接合端面状态、接合温度、保温时间、接合压力和接合气氛等工艺条件进行了对比分析,并根据接合部位的断裂强度和微观结构的研究结果,建立了在本实验条件下最佳发热元件冷热端扩散接合工艺条件:接合端面粗糙度为1.5μm,接合温度1570-1600℃,保温时间30-60 s,接合载荷15 kg,接合气氛为氩气.In order to study the effect of diffusion bonding technology parameters on the joint strength of MoSi2 heating element cold-hot end, the technological papameters such as temperature, pressure, holding time and atmosphere were researched. And the effect of the state of the end surface of MoSi2 bars on the strength and microstructure of the junction was analyzed. Based on results, the appropriate technology parameters were put forward： roughness of end surface of 1.5 μm, jointing temperature of 1570 ～ 1600 ℃, holding time of 30 ～ 60 sec, jointing load of 15 kg and atmosphere of argon.

关 键 词：二硅化钼发热元件 扩散接合 微观组织 接合强度 

分 类 号：TG401[金属学及工艺—焊接]