蒸镀法制备全有机并五苯薄膜场效应晶体管  

All-organic Thin-film Field-effect Transistors Fabricated by Fully-evaporation

作　　者：王伟[1] 石家纬[1] 郭树旭[1] 刘明大[1] 张宏梅[1] 梁昌[1] 全宝富[1] 马东阁[2] 

机构地区：[1]吉林大学电子科学与工程学院集成光电子学国家重点实验室,吉林长春130012 [2]中国科学院长春应用化学研究所高分子物理与化学国家重点实验室,吉林长春130022

出　　处：《发光学报》2007年第2期203-206,共4页Chinese Journal of Luminescence

基　　金：国家自然科学基金(60176022);吉林省自然科学基金(20020634);国家"973"计划(2003CB314703)资助项目

摘　　要：以全蒸镀方法在真空室内一次性制备了正装结构的全有机并五苯薄膜场效应晶体管。正装结构全蒸镀法有利于简化工艺制备程序,缩小器件尺寸,提高集成度。制备的绝缘层厚度仅为50nm的全有机薄膜场效应晶体管,器件的工作电压降至10V,相同电压下饱和输出电流有了明显提高。筛选适当的有机绝缘材料,改善全有机薄膜场效应晶体管有源层/绝缘层的界面性能,使阈值电压几乎降至0V,场效应迁移率提高了3倍多,输出饱和电流也有了明显的提高。Top-gate all organic thin-film field-effect transistors are fabricated one-off by fully-evaporation method without breaking vacuum, which has many advantages. The fabrication technology simplifies the device processing, and avoids the spot due to the preparation condition change. By evaporation method preparing device, the every layer film thickness can be controlled rigorous, and the thinner, symmetrical, compact film layers are propitious to reduce the operation voltage and enhance the device on-current. The source-drain electrode can be prepared by conventional photolighography technique on the ITO coated glass substrates, and the active layer, insulator layer and gate electrode can be patterned by different shadow masks, which are propitious to scale down device dimension and enhance integration degree. When the OTFTs with top-gate were used to integrated circuit or active-matrix OLED display, the above advantages will be more clearly. All-organic thin-film field-effect transistors （Device A） with pentacene/thin Teflon insulator film of 100 nm were successful fabricated, with operating voltage reach to 40 V, threshold voltage VT = - 8 V and mobility μ = 1.0 × 10^ -2 cm^2/V · s. As for Device B, with the thickness of Teflon insulator film decrease to 50 nm and the same process condition with that of Device A, the operating voltage fell to 10 V, threshold voltage VT = -3 V and mobility μ= 1.2 × 10^-2 cm^2/V ·s. The result indicates that thinner insulator film can reduce operation voltage observably. However, the mobility has no obvious change with the similar pentacene/Teflon interface performance due to the same process condition. When the OTFT （Device C） fabricated with PMMA （150 nm） replacing Teflon as insulator layer, the threshold voltage of device was decreased to near 0 V, and mobility was increased more 3 times than that of the previous devices, and the saturation current was also increased obviously. These results indicate that the appropriate organic insulator can be used to improve

关 键 词：全蒸镀 全有机薄膜场效应晶体管 

分 类 号：TN386[电子电信—物理电子学]