低温条件下单晶氮化铝纳米线生长机理的研究  

The growth mechanism of monocrystal aluminum nitride nanowires at low temperature

作　　者：吕惠民[1] 陈光德[1] 颜国君[1] 耶红刚[1] 

机构地区：[1]西安交通大学应用物理系,西安710049

出　　处：《物理学报》2007年第5期2808-2812,共5页Acta Physica Sinica

基　　金：国家自然科学基金(批准号:10474078);陕西省教育厅科学基金资助的课题~~

摘　　要：在25mL的不锈钢反应釜中,利用无水三氯化铝与叠氮化钠在无溶剂的条件下直接反应,成功地合成出了单晶氮化铝纳米线,反应温度为450℃,有效反应时间为24h.高分辨率透射电子显微镜测试结果显示,纳米线多为长直线状外貌特征,直径在40—60nm范围内,最大长度可达几个微米.高分辨率电子衍射和X射线衍射结果都表明,多数纳米线为六方结构,也有少量呈现面心立方结构.同时,提出了长直线状六方和面心立方单晶氮化铝纳米线的生长机理的假设,并对六方单晶氮化铝纳米线生长方向的人工控制也进行了讨论.In a stainless steel autoclave of 25ml capacity, pure hexagonal aluminum nitride （h-AlN） nanowire has been successfully synthesized by direct reaction of AlCl3 with NaN3 in non-solvent system at low temperature. The obtained grayish-white powder is characterized by high-resolution transmission election microscopy, which shows that the grayish-white products consist of long straight-wires with diameter from 40nm to 60nm and the longest ones were up to several micrometers. The electron diffraction and XRD analysis indicat that the AlN manowire has hexagonal/cubicl monocrystal structure. A possible growth mechanism for h-AlN nanowire is disscussed.

关 键 词：六方单晶氮化铝 纳米线 X射线衍射 透射电子显微镜 

分 类 号：O781[理学—晶体学]