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作 者:牛艺[1] 王增梅[1] 刘英才[1] 尹衍升 袁多荣[2]
机构地区:[1]中国海洋大学材料科学与工程研究院,青岛266100 [2]山东大学晶体材料国家重点实验室,济南250100
出 处:《物理学报》2007年第5期2968-2973,共6页Acta Physica Sinica
基 金:国家自然科学基金(批准号:50242008);'长江学者奖励计划'资助的课题~~
摘 要:利用X射线粉末衍射确定了Tm3+掺杂硅酸镓镧(La3Ga5SiO14,LGS)晶体的晶体结构;运用DICVOL91程序计算了该晶体不同部位的晶胞参数;测定了Tm:LGS晶体的室温吸收谱和470nm光激发下的发射光谱;根据Judd-Ofelt理论拟合了Tm3+的三个晶场调节参数Ωt(t=2,4,6),分别为2.694×10-20cm2,1.842×10-20cm2,0.030×10-20cm2;计算了各个能级跃迁的谱线强度、振子强度、吸收截面等,进而计算了3H4和3F4态的自发跃迁概率、辐射寿命、荧光分支比和积分发射截面,并对结果进行了分析.The structure of Tm^3 + -doped langasite(La3 Gas SiO14, abbreviated as LGS) crystal has been measured by XRD. The crystal lattice parameters were calculated with DICVOL91 program. The absorption spectra and emission spectra (excitated under 470 nm) of Tm: LGS single crystal was measured at room temperature. And the optical parameters, such as transition-line intensity, oscillator strength and absorption section were calculated by using Judd-Ofelt theory. The three intensity parameters Ωt ( t = 2,4,6) were fitted to be 2.694 × 10^-20 cm^2 , 1.842 × 10^-20 cm^2 ,0.030 × 10^-20 cm^2 ,respectively. The lifetime, branching ratio and integrated stimulated-emission cross section were obtained and the results were discussed.
关 键 词:Tm:LGS晶体 吸收谱 Judd—Ofelt理论 光谱参数
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