The simulation of temperature dependence of responsivity and response time for 6H-SiC UV photodetector  

作　　者：张义门 周拥华 张玉明 

机构地区：[1]Key Lab of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China

出　　处：《Chinese Physics B》2007年第5期1276-1279,共4页中国物理B（英文版）

摘　　要：In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet （UV） photodetector is simulated based on numerical model in the range from 300 K to 900 K. The simulation results show that the responsivity and the response time of device are less sensitive to temperature and this kind of UV photodetector has excellent temperature stability. Also the effects of device structure and bias voltage on the responsivity and the response time are presented. The thicker the drift region is, the higher the responsivity and the longer the response time are. So the thickness of drift region has to be carefully designed to make trade-off between responsivity and response time.In this paper the temperature dependence of responsivity and response time for 6H-SiC ultraviolet （UV） photodetector is simulated based on numerical model in the range from 300 K to 900 K. The simulation results show that the responsivity and the response time of device are less sensitive to temperature and this kind of UV photodetector has excellent temperature stability. Also the effects of device structure and bias voltage on the responsivity and the response time are presented. The thicker the drift region is, the higher the responsivity and the longer the response time are. So the thickness of drift region has to be carefully designed to make trade-off between responsivity and response time.

关 键 词：6H-Silicon carbide UV photodetector absorption coefficient RESPONSIVITY response time 

分 类 号：TN23[电子电信—物理电子学] TN15