Electrical and optical characteristics of vanadium in 4H-SiC  

作　　者：王超 张义门 张玉明 

机构地区：[1]Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Microelectronics Institute, Xidian University, Xi'an 710071, China

出　　处：《Chinese Physics B》2007年第5期1417-1421,共5页中国物理B（英文版）

基　　金：Project supported by the National Natural Science Foundation of China （Grant No 60376001）, the National Basic Research Program of China （Grant No 2002CB311904） and the National Defense Basic Research Program of China （Grant No 51327020202）. Acknowledgments The authors would like to thank Li Cheng-Ji and Ye Xiao-Ling of Institute of Semiconductors, Chinese Academy of Sciences for measuring the temperaturedependent resistivity and absorption, respectively, and they also thank Ma Nong-Nong at the Centre of Electronic Materials Characterization of Tianjin Electronic Materials Research Institute for performing SIMS measurements.

摘　　要：A semi-insulating layer is obtained in n-type 4H-SiC by vanadium-ion implantation. A little higher resistivity is obtained by increasing the annealing temperature from 1450 to 1650 ℃. The resistivity at room temperature is as high as 7.6 ×10^6 Ω. cm. Significant redistribution of vanadium is not observed even after 1650 ℃ annealing. Temperaturedependent resistivity and optical absorption of V-implanted samples are measured. The activation energy of vanadium acceptor level is observed to be at about Ec - 1.1 eV.A semi-insulating layer is obtained in n-type 4H-SiC by vanadium-ion implantation. A little higher resistivity is obtained by increasing the annealing temperature from 1450 to 1650 ℃. The resistivity at room temperature is as high as 7.6 ×10^6 Ω. cm. Significant redistribution of vanadium is not observed even after 1650 ℃ annealing. Temperaturedependent resistivity and optical absorption of V-implanted samples are measured. The activation energy of vanadium acceptor level is observed to be at about Ec - 1.1 eV.

关 键 词：semi-insulating 4H-SiC vanadium ion implantation ANNEALING activation energy 

分 类 号：O484[理学—固体物理]