采用中频反应磁控溅射技术沉积氮化锆薄膜  

ZrN films deposited by the technology of mid-frequency reactive magnetron sputtering

作　　者：杨钰瑛[1] 孙维连[1] 李新领[1] 王会强[1] 孙玉梅[1] 

机构地区：[1]河北农业大学机电工程学院,河北保定071001

出　　处：《材料热处理学报》2007年第2期30-32,共3页Transactions of Materials and Heat Treatment

基　　金：河北农业大学基金项目(F05010)

摘　　要：采用中频反应磁控溅射技术沉积ZrN薄膜,在真空镀膜机内对称安装了3对矩形孪生靶。利用等离子体发射光谱和质谱仪QMS200分别实时监控真空炉内靶材表面的谱线变化和各种气氛的分压强,并通过控制系统氮气流量自动调控,从而消除了靶中毒和打火现象,确保了溅射镀膜的稳定进行。通过对氮化锆膜层的显微组织观察、X射线衍射和俄歇半定量分析,沉积的氮化锆薄膜膜层致密,与基体的结合牢固。结果表明:当炉内氮气分压强为45%,控制靶电压200V,靶电流为25A,逐步调节Ar与N2比例,可获得成分均匀,膜层致密,结合力较好的金黄色氮化锆薄膜。Three pairs of rectangular twin-targets were installed symmetrically in the vacuum chamber when the ZrN films were deposited by midfrequency reactive magnetron sputtering technique. A plasma emission spectrometer and QMS200 mass spectrometer were respectively used to measure the speetnun line and the partial pressure of the gases, and through automatic eontrolling of the flux of nitrogen, the target poisoning and electrical discharge were eliminated and thus the stability of the sputtering deposition was insured. Through the mierostrueture observation, X-ray diffraetion and AES analysis, it is found that the ZrN films are eompacted and eombined fast with the substrate. The results indieate that when the partial pressure of nitrogen is 45%, the voltage of the targets is 200V, the eurrent of the targets is 25A, adjusting the Ar and N2 proportion, the golden eolor ZrN films ean be acquired with the uniformly components, and the films are eompacted and have good adhesion.

关 键 词：中频溅射 孪生对靶 氮化锆 薄膜 

分 类 号：TG174.444[金属学及工艺—金属表面处理] TG132.5[金属学及工艺—金属学]