掺杂Co_3O_4对Ce_(0.8)Gd_(0.2)O_(2-δ)固体电解质性能的影响  

Effect on the Properties of Solid Electrolyte Doped Cobalt Oxide in Ce_(0.8)Gd_(0.2)O_(2-δ)

作　　者：张志娟[1] 劳令耳[2] 陈平[2] 刘毅[3] 

机构地区：[1]贵州大学化学工程学院,贵州贵阳550003 [2]贵州大学基础部,贵州贵阳550003 [3]中国科学技术大学材料科学与工程系,安徽合肥230026

出　　处：《材料科学与工程学报》2007年第2期280-283,共4页Journal of Materials Science and Engineering

基　　金：贵州省科学技术基金资助项目((2003)3003);贵州工业大学科学研究资助项目

摘　　要：采用低温燃烧法制备了Ce0.8Gd0.2O2-δ(CGO)及掺杂2.0mol%CoO1.333的CGO(2Co-CGO),研究了掺杂Co3O4对CGO密度和电导率的影响。实验发现,由于烧结过程中粘性流动烧结的发生,掺杂Co3O4后可在一定的温度范围内使样品致密度提高;经SEM分析,1100℃烧结5h的2Co-CGO晶粒生长完整;与CGO相比较,2Co-CGO在700℃所测电导率略有降低。CGO and CGO adulterated with 2.0mol% CoO1.333 were synthesized by low-temperature combustion method, and the effects of doped cobalt oxide on density and conductivity were studied too. The results of the experiment indicate that the relative density of samples adulterated with Co3O4 can be enhanced within a certain temperature range, due to the presence of the viscous flow sintering. SEM micrograph showed that the grains sintered at 1100℃ for 5h grown more integrated. In contrast with samples unadulterated with cobalt oxide, the conductivities of 2Co-CGO measured at 700℃ decreased slightly.

关 键 词：CE0.8Gd0.2O2-δ 氧化钴 掺杂 致密度 电导率 

分 类 号：TM215[一般工业技术—材料科学与工程]