砷化镓单电源电路研究  

Study of GaAs Single Supply Circuits

作　　者：赵建龙[1] 夏冠群[1] 范恒[1] 施健[1] 

机构地区：[1]中国科学院上海冶金研究所,上海200050

出　　处：《Journal of Semiconductors》1997年第3期193-196,共4页半导体学报（英文版）

基　　金：国家自然科学基金

摘　　要：本文对BFL单元电路进行了改进，首次提出一种新型的GaAs单电源单元电路，并研究了该单元电路与SiTTL电路的接口电路，实验结果表明该单元电路的设计是可行的，适合于制作中、小规模集成电路．The Buffered FET Logic (BFL) circuits have been investigated and improved.A novel GaAs single supply circuit has been given. The interface circuits between the single supply circuit and Si TTL ICs have also been studied. It has been proved experimentally that the design of the single supply circuit is reasonable, and this circuit is suitable to the fabrication of small and medium scale integrated circuits.

关 键 词：砷化镓 单元电路 设计 

分 类 号：TN304.23[电子电信—物理电子学] TN302