半导体纳米薄膜热电性能表征技术的研究进展  

Progress of Research on Thermoelectric Properties Measurements of Semiconductor Nano-films

作　　者：肖承京[1] 杨君友[1] 朱文[1] 鲍思前[1] 樊希安[1] 段兴凯[1] 

机构地区：[1]华中科技大学材料成型与模具技术国家重点实验室,武汉430074

出　　处：《材料导报》2007年第3期1-4,共4页Materials Reports

基　　金：国家自然科学基金(50401008);国家重大基础研究发展计划(973计划)(2004CCA03200)项目资助

摘　　要：综述了半导体纳米薄膜热电性能表征的方法及相关的技术原理。从平行膜面和垂直膜面两方面对纳米薄膜材料热电性能3种重要参数的表征方法进行了描述;同时简要介绍了能直接测量热电优值的Harman方法的基本原理和操作过程。在此基础上指出了各方法的优缺点,并提出了今后开发检测装置需努力的方向。The characterization of thermoelectric properties of semiconductor nano-films on methods and relative theories are reviewed. The measurements are divided into in-plane and across-plane aspects, which include the three important parameters of thermoelectric material In this paper, the theory and operations of Harman method are given. The figure of merit ZT can directly be measured by this method. The advantages and shortages of these methods are introduced. And the development direction of designing measure device is proposed.

关 键 词：纳米薄膜 热电性能 表征 

分 类 号：TB383[一般工业技术—材料科学与工程]