MCBiCMOS门阵列的母片设计  

Design of MCBiCMOS Gate Array Master Chip

作　　者：唐伟 顾泰 

机构地区：[1]无锡华晶电子集团公司中央研究所,无锡214035

出　　处：《电子器件》1997年第1期42-45,共4页Chinese Journal of Electron Devices

摘　　要：本文介绍MCBiCMOS(合并互补BiCMOS)门阵列的母片设计技术.由于采用了先进的MCBiCMOS工艺和设计技术[1],MCBiCMOS更适合于制作高性能、大规模的专用集成电路.在2μmCMOS和3μm双极相结合的设计规则基础上,我们设计了MCBiCMOS2000门门阵列母片,并利用MCBiCMOS宏单元库,成功地完成了CGB2003(24位双向移位寄存器)等电路的自动化设计.This paper daseribes design technology for MCBiCMOS (Merged Complementary BiCMOS) gate array master chip. Our experimental result have showed that MCBiCMOS circuits have higher packing density, higher speed and better performance working at low supply voled corn[o conventional BiCMOS and CMOS. The advanced MCBiCMOS technology enables us tO make high er performance and labber--SCale ASIan.We have develo~ ZK MCBiCMOS gete array ~ter chip beed on Zap CMOS and 3pm blab far technology. Using this master chip and macrocell library, we have desiped several circuits as CBO2003(a higher Speed 24 bitS dual direction shift rigister).

关 键 词：门阵列 基本单元 母片 集成电路 

分 类 号：TN402[电子电信—微电子学与固体电子学]