熔融硅液相浸渍法制备C／C-SiC复合材料  

Preparation of C/C-SiC composites by molten silicon infiltration method

作　　者：王道岭[1] 汤素芳[1] 邓景屹[1] 刘文川[1] 

机构地区：[1]中国科学院金属研究所,沈阳110016

出　　处：《材料研究学报》2007年第2期135-139,共5页Chinese Journal of Materials Research

基　　金：国家自然科学基金90205017资助项目

摘　　要：采用熔融硅液相浸溃法制备了C／C-SiC复合材料,反应生成的SiC主要分布在层间孔和束间孔碳基体表面,少量分布在束内孔．1600℃渗硅2 h,硅化深度约为2～4μm．由于液态硅与碳之间的润湿性很好,在碳基体表面形成了连续的SiC层,局部有粗大的多面碳化硅颗粒生成;讨论了细晶粒连续SiC层和SiC粗晶粒形成机理．由于SiC的加入,材料的抗氧化性能得到明显改善．C/C-SiC composites were prepared by MSI process, and the microstructure of the materials was investigated in this paper. The results show that a majority of the reaction-formed silicon carbide distributes in inter-layer pores and inter-bundle pores, while a minority in the inter-fiber pores. After the 2 h MSI process at 1600 ℃, the reaction-formed silicon carbide layer is 2-4 μm in thickness. Due to the good wetting characteristics of the liquid silicon upon the pyrolytic carbon, there are continuous SiC layers formed on the surface of the carbon matrix; however some SiC grains with faceted surfaces are also found. The forming mechanisms of the continuous SiC layers and faceted SiC grains were discussed. The oxidation experiment results show that the oxidation resistance of the material is significantly improved owing to additive of SiC.

关 键 词：复合材料 熔融硅 液相浸渍 C/C—SiC复合材料 抗氧化 

分 类 号：TB332[一般工业技术—材料科学与工程]