硝磷酸腐蚀对CdTe薄膜性能及背接触层的影响  

Effects of nitric-phosphoric acid etches on properties of CdTe thin films and back contacts of CdTe solar cells

作　　者：李卫[1] 冯良桓[1] 郝瑞英[1] 陈茜[1] 

机构地区：[1]四川大学材料科学与工程学院材料科学系,成都610064

出　　处：《材料研究学报》2007年第2期194-198,共5页Chinese Journal of Materials Research

基　　金：国家高技术研究与发展计划(2003AA513010);国家自然科学基金(60506004);四川省科技攻关基金(05GG021-003-3);辐射物理及技术教育部重点实验室(四川大学)(K2005-10)资助项目

摘　　要：采用硝磷酸(NP)背表面刻蚀工艺并结合真空共蒸发法分别沉积了几种背接触层材料,研究了NP腐蚀对CdTe薄膜性能及背接触层的影响．结果表明:NP腐蚀后在CdTe薄膜上产生了富碲层;退火后,碲容易与背接触材料中的铜反应生成CuxTe．通过严格控制和优化腐蚀工艺,选择ZnTe／ZnTe:Cu作为背接触层材料,可制备出优异性能的CdTe太阳电池．The CdTe thin films were etched with a mixture of nitric-phosphoric acid in water （NP）, and then several kinds of back contact materials were deposited respectively by co-evaporation in this paper. The effect of nitric-phosphoric acid pretreatment on material properties and back contact formation of CdTe solar cells were investigated. The results show that the chemical etching produces a Te rich layer on the back surface of CdTe films and on grain boundaries, and this readily leads to the reaction with Cu or Cu-containing back contact materials and the formation of CuxTe after annealing. When etched under optimum conditions and used ZnTe/ZnTe：Cu as back-contact materials, the small area CdTe solar cells show high performance.

关 键 词：材料合成与加工工艺 硝磷酸(NP) 背接触 太阳电池 

分 类 号：TM911[电气工程—电力电子与电力传动]