低温合成Ti_3SiC_2陶瓷  

LOW-TEMPERATURE SYNTHESIS OF Ti_3SiC_2

作　　者：金松哲[1] 梁宝岩[1] 李敬锋[1] 孙世成[1] 任露泉[2] 

机构地区：[1]长春工业大学材料科学与工程学院,长春130012 [2]吉林大学地面机械仿生技术教育部重点实验室,长春130022

出　　处：《硅酸盐学报》2007年第5期629-632,共4页Journal of The Chinese Ceramic Society

摘　　要：采用机械合金化和放电等离子烧结技术制备了纯度较高的Ti3SiC2陶瓷,研究了微量Al对Ti3SiC2的机械合金化和放电等离子烧结过程的影响。结果表明:添加适量的Al可以显著提高机械合金化及放电等离子烧结产物中Ti3SiC2的含量,并显著降低高纯度Ti3SiC2的烧结温度。机械合金化10h,成分为3Ti/Si/2C/0.2Al(摩尔比)的混合粉体,经850℃放电等离子烧结可获得质量分数(下同)高达96%的Ti3SiC2块体,烧结温度提高到1100℃,可获得纯度为99.3%、相对密度高达98.9%的Ti3SiC2致密块体。High purity Ti3SiC2 ceramics were prepared by the mechanical alloying （MA） and spark plasma sintering （SPS） methods, and the effect of trace amounts of Al on these processes was investigated. The results show that proper addition of Al may obviously increase the purity of Ti3SiC2 in products prepared by MA and subsequent SPS, and remarkably reduce the sintering temperature for Ti3SiC2. The Ti3SiC2 sintered with a purity of 96 % （in mass, the same below） is obtained by MA for 10h and subsequent SPS at 850℃ from a starting mixture composed of 3Ti/Si/2C/0.2Al （in mole）. After sintering at 1100℃, Ti3SiC2 with a purity of 99.3% and a relative density of 98.9% is obtained.

关 键 词：钛硅碳陶瓷 机械合金化 放电等离子烧结 

分 类 号：TG135.5[一般工业技术—材料科学与工程]