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作 者:高洁[1,2,3] 熊曹水[1,2,3] 汤业庆[1,2,3] 朱弘[1,2,3] 朱警生[1,2,3] 张裕恒 季可斌
机构地区:[1]中国科学技术大学结构分析开放实验室 [2]新疆大学物理系 [3]中科院固体物理研究所
出 处:《低温物理学报》1997年第2期88-92,共5页Low Temperature Physical Letters
基 金:中国科学院重大项目资助
摘 要:制备条件对La_(0.67)Sr_(0.33)MnO_(3)外延薄膜结构及磁电阻的影响高洁,熊曹水,汤业庆,朱弘,朱警生,张裕恒,季可斌中国科学技术大学结构分析开放实验室,合肥230026新疆大学物理系,乌鲁木齐830046中科院固体物理研究所,合肥...La1-xSrxMnO3 (x= 0. 33) epitaxial films have been grown on (00l) LaAlO3 substrates by DC magnetron sputtering method.' Temperature dependencies of the resistivity of zero field and under an applied filed for the films before and after a subsequent annealing have been measured. lt was observed the resistivity re- duced and the peak of the resistivity shifted to higher temperatures as the sub- strate temperature was increased. The largest MR effect was found for films with substrate temperature maintained at 650℃ . Annealing at 900℃ in an O2 atmo- sphere , the interplanar spacing . reduced and the axial length a , b and c con- tracted. The resistivity became smaller and the peak of resistivity shifted to high- er temperatures even more after the subsequent heat treatment.
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