光电导器件的探测理论分析  

THEORETICAL ANALYSIS OF PHOTOCONDUCTOR DETECTION

作　　者：张振杰[1] 

机构地区：[1]西北大学物理系,西安710069

出　　处：《光子学报》1997年第3期285-288,共4页Acta Photonica Sinica

摘　　要：本文介绍了光电导器件的物理基础和探测原理，推导出了代表器件特性的电压响应度和电流响应度公式，并指出了提高器件探测灵敏度的途径．In this paper,physics and principle of photoconductor detection is presented. Characteristics formula of photoconductors,voltage responsivity and current responsivity will be derived. The article indicates the way to upgrade the sensitivity of the semiconductor.

关 键 词：光电导器件 能带理论 本片半导体 

分 类 号：TN201[电子电信—物理电子学]