SiO_2内保护层对LiB_3O_5晶体倍频增透膜损伤阈值的影响  

Effect of SiO_2 barrier layer on laser induced damage threshold of second harmonic antireflection coatings on LiB_3O_5 crystal

作　　者：于爱芳[1] 范飞镝[1] 刘中星[1] 朱镛[1] 陈创天[1] 

机构地区：[1]中国科学院理化技术研究所人工晶体研究与发展中心

出　　处：《强激光与粒子束》2007年第4期603-606,共4页High Power Laser and Particle Beams

基　　金：国家863计划项目资助课题

摘　　要：利用离子辅助电子束沉积方法在LiB3O5基底上镀制了不加SiO2内保护层和加SiO2内保护层的倍频增透膜,测量了两类薄膜在波长1064 nm多脉冲辐照下的激光损伤阈值,获得了两种不同的损伤形貌,并对损伤原因作了初步探讨。实验结果表明:保护层的加入把由基底膜层界面缺陷吸收所决定的阈值改变到由HfO2膜层内缺陷吸收所决定的阈值,显著提高了倍频增透膜的抗激光损伤能力。Two different kinds of second harmonic antireflection（AR） coatings, with and without SiO2 barrier layer were prepared with ion assisted deposition on LiB3O5 crystal. Laser induced damage threshold（LIDT） by multiple-shot irradiation at 1 064 nm was studied and two typical damage morphologies were observed by SEM. The AR coatings with SiO2 barrier layer have an excellent LIDT, which is about 40% higher than that of coatings without barrier layer. The mechanism of LIDT enhancement by adding SiO2 barrier layer is also discussed.

关 键 词：LiB3O5 SiO2内保护层 倍频增透膜 激光损伤阈值 损伤形貌 

分 类 号：TB43[一般工业技术] O484.4[理学—固体物理]