Φ200mm太阳能用直拉硅单晶生长速率研究  

Study on Growing Rate in Φ200mm CZ Si Growth

作　　者：任丙彦[1] 羊建坤[1] 李彦林[1] 

机构地区：[1]河北工业大学材料学院,天津300130

出　　处：《半导体技术》2007年第2期106-108,120,共4页Semiconductor Technology

基　　金：国家自然科学基金资助项目(60576002)

摘　　要：介绍了Φ200mm的太阳能用直拉硅(CZ Si)单晶生长中,采用热屏、复合式导流系统及双加热器改造直拉炉的热系统,进行不同热系统下的拉晶试验,平均拉速从0．6 mm／min提高到0．9 mm／min。用有限元法模拟了氩气的流场及单晶炉的热场,模拟结果表明:改造后的氩气流场被优化,界面附近的晶体纵向温度梯度增加,熔体纵向温度梯度减小。The experiments of thermal system Φ200 mm CZ Si growth were introduced, using heat shield, composite argon duct system and double-heater modified system. Average pulling rate could increase from 0.6 mm/min to 0.9 mm/min. Argon flow and temperature fields were simulated by finite element method （FEM）. Numerical simulation results indicated that argon flow field is optimized in modified system. The difference of temperatures nearby the interface increased in the crystal, but reduced in the melt.

关 键 词：太阳能直拉硅 热屏 双加热器 有限元法 

分 类 号：TN304.053[电子电信—物理电子学]